1 | 2011-12-31 | 1-1 | | Study And Analysis Of Oxide Materials Using Fuzzy Logic Technique | tjprcabs78.pdf | Dr. Anup Mishra, Mr. Padmadhar Mishra & Mr. Abhishek Verma | 1-19 |
2 | 2011-12-31 | 1-1 | | Ultra High Speed Linbo3 And Polymer Electrooptic Modulators In Lightwave Optical Access Communication Networks | tjprcabs79.pdf | Dr. Ahmed Nabih Zaki Rashed | 20-47 |
3 | 2011-12-31 | 1-1 | | Joint Video Coding And Tracking Approach | tjprcabs192.pdf | Asst. Prof. T. Arumuga Maria Devi, Ms. Y. Jenisha & Ms. K.K Sherin | 48-61 |
4 | 2012-09-30 | 2-1 | | High-Performance Low-Power Sigma-Delta Adc Design | 2-8-1346345416-abs HIGH.pdf | Prashant Singh & Narendra Bahadur Singh | 1-15 |
5 | 2012-09-30 | 2-1 | | Role of Temperature in the Formation of ZnSe Nanomaterials by Chemical Reduction Method | 2-8-1346345675-abs ROLE OF TEMPERATURE IN THE FORMATION OF.pdf | Satyajit Saha et al., | 16-25 |
6 | 2012-09-30 | 2-1 | | Synthesis and Study of Nonlinear Optical Properties of a New AZO Dye by Z-Scan Technique | 2-8-1346345907-abs SYNTHESIS AND STUDY OF NONLINEAR OPTICAL PROPERTIES OF A NEW AZO DYE BY Z.pdf | Hussain A. Badran & Adil A. Al-Fregi | 26-36 |
7 | 2013-03-31 | 3-1 | | Effect of Yttrium Doping on the Properties of Bismuth Ferrite: A Review | 2-8-1357205022-ABS Effect.pdf | Subhabrata Chakraborty, Soumya Mukherjee & Siddhartha Mukherjee | 1-10 |
8 | 2013-06-30 | 3-2 | | Digital Parameters Effect of LHM Modeling | 2-8-1364453182-ABS Digital parameter.pdf | C. Chettah & C. Chaabi | 1-6 |
9 | 2013-06-30 | 3-2 | | Activation Energy of InGax1-XAs Thin Film Prepared by MBE | 2-8-1366896665-ABS Activation energy.pdf | Alam M K | 7-16 |
10 | 2013-06-30 | 3-2 | | Comparative Study of Thermal Noise of Si Surrounding Gate MOSFET (SGMOSFET) with Different Gate Oxides | 2-8-1367846692-ABS Comparative study.pdf | Saradindu Panda et al. | 17-22 |
11 | 2013-06-30 | 3-2 | | Modelling of Towering Speed and Area Competent Vedic Multiplier | --1369466863-ABS Modelling of towering.pdf | Padmanabin Gopalakrishna & Gangavarapu Kiran Kumar | 23-32 |
12 | 2013-06-30 | 3-2 | | Effect of Annealing on the Characteristics of Nano Crystalline CdS Thin Films Prepared by Chemical Bath Deposition Method | 2-8-1371200030-ABS Effect of annealing.pdf | RA. Shanmugavadivu, J. Yuvaloshini & G. Ravi | 33-42 |
13 | 2013-08-31 | 3-3 | | Route to Chaos and Nonradiative Recombination in Laser Diode | 2-8-1371200076-ABS Roue to chaos.pdf | Salah Abdulrhmann | 1-12 |
14 | 2013-08-31 | 3-3 | | Ultra Low-Power Digital Circuits Using Multi-Threshold MTCMOS Technique | 2-8-1374054864-ABS Ultra low power.pdf | P. Sreenivasulu, Y. Amulya, K. Srinivasa Rao & A.Vinaya Babu | 13-24 |
15 | 2013-10-31 | 3-4 | | Analytical Modeling of Triple Gate MOSFET | 2-8-1376317626-ABS Analytical modelling.pdf | S Nandi & M Sarkar | 1-10 |
16 | 2013-10-31 | 3-4 | | Performance of a Nanostructured PbS/Si Hetrojunction Detector Deposited by CBD | 2-8-1378276984-ABS Performance of a nanostructured.pdf | Ali M. Mous, Selma M. H. Al-Jawad & Suad M. Kadhim Al-Shammari | 11-18 |
17 | 2014-10-31 | 4-1 | IJSSTOCT20141 | Foreign Matter Reduction in High Density Plasma Chemical Vapor Deposition Process | 2-8-1412166833-ABS - 1. Semi Conductor - IJSST -Foreign Matter Reduction-Vivek Krishnamoorthy.pdf | Vivek Krishnamoorthy | 1-4 |
18 | 2014-10-31 | 4-1 | IJSSTOCT20142 | Hydrogen Gas Sensors Based on ZnO Thin Films | 2-8-1412759910-ABS - 2. Semi conductor - IJSST - Hydrogen Gas Sensors - Sabah Ibrahim abbas.pdf | Sabah Ibrahim Abbas | 5-14 |
19 | 2014-12-31 | 4-2 | IJSSTDEC20141 | Noise Modeling Circuit of Quantum Structure Type of Infrared Photodetectors | 2-8-1413548114-ABS - 1. Semi conductor - IJSST - NOISE MODELING CIRCUIT OF QUANTUM STRUCTURE.pdf | Mohamed B. El_Mashade & M. El_Hanash | 1-12 |
20 | 2014-12-31 | 4-2 | IJSSTDEC20142 | Thermal Effect on the Dc Characteristics in Al0.3Ga0.7N/GaN High Electron Mobility Transistor | --1415103164-ABS - 2. Semi conducotr - IJSST - THERMAL EFFECT ON THE DC - Hamida DJELTI (1) (1).Pdf | Hamida Djelti | 13-18 |
21 | 2015-04-30 | 5-1 | IJSSTAPR20151 | Fabrication of Cds/Si Heterojunction Solar Cell | 2-8-1427437637-ABS - 1. Semi Conductor - IJSST - FABRICATION OF CdS - SATYAJIT SAHA.pdf | Satyajit Saha, Rahul Bhattacharya & Amit Kumar Bhunia | 1-6 |
22 | 2015-06-30 | 5-2 | IJSSTJUN20152 | Effect of Ni-Doping on Structural and Magnetic Properties of ZnO Nanoparticles | --1430744571-1. ABS -Semi conductor - IJSST - EFFECT OF NI.pdf | Raminder Preet Pal Singh, I.S. Hudiara,Sudhakar Panday& Pushpendra Kumar | 1-10 |
23 | 2015-10-31 | 5-3 | IJSSTOCT201501 | Ac and Dc Electrical Properties of Tetrapyrazino-Porphyrazine Vanadyl (ɪv) | 2-8-1444638758-ABS - 3. Semiconductor - IJSST - Ac and dc electrical Properties of Tetrapyrazino-Porphyrazine.pdf | Nazar A. Hussien | 1-6 |
24 | 2016-02-29 | 6-1 | IJSSTFEB20161 | Investigation of Size and Band Gap Distributions of Si Nanoparticles from Morphology and Optical Properties of Porous Silicon Layers Formed on a Textured N+ P Silicon Solar Cell | --1466231878-ABS - 1. IJSST - Investigation of Size and Band Gap Distributions of Si.pdf | G. M. Youssef et al., | 1-12 |
25 | 2015-12-31 | 5-4 | IJSSTDEC20151 | Synthesis and Characterization of Sm-Doped Zinc Oxide Nano-Crystalline Powders | --1466231819-ABS - 1. IJSST - Synthesis And Characterization Of Sm-Doped Zinc.pdf | Siva Prasad Peddi et al., | 1-8 |
26 | 2016-02-29 | 6-1 | IJSSTFEB20162 | Thermal Study of the DC Behavior in Sio2/Al0.26ga0.74N/GaN MOS-HEMT | --1466231903-ABS - 2. IJSST - THERMAL STUDY OF THE DC BIHAVIOR IN.pdf | Hamida Djelti | 13-18 |
27 | 2016-02-29 | 6-1 | IJSSTFEB20163 | Application of the Dispersive FDTD Method for Studying Different Effects which Limit the Resolution of Sub -Wavelength of LHM Slab | 2-8-1466232242-ABS - 3.Semi - IJSST - Digital parameters - C. Chettah - Algeria - OPaid.pdf | C. Chettah et al., | 19-24 |
28 | 2016-04-30 | 6-2 | IJSSTAPR20161 | A Study on the Influence of Nonradiative Recombination Lifetime on the Route to Chaos of Semiconductor Laser | 2-8-1466236510-ABS - 1. Semi-IJSST-Route -to-chaos-.pdf | Salah Abdulrhmann | 1-14 |
29 | 2016-04-30 | 6-2 | IJSSTAPR20162 | Demonstration of Electrical Transport and Photo Response Properties of Nano Pbs / N-Si Hetero Junction Grown by Chemical Bath Deposition | 2-8-1466236596-ABS - 2. IJSST - Demonstration of Electrical Transport and Photo Response Properties.pdf | Ali M. Mous et al., | 15-22 |
30 | 2016-04-30 | 6-2 | IJSSTAPR20163 | A Study on Thermal Noise Performance of Various Substrates with Respect to different Oxides | 2-8-1466401374-ABS - 3.- IJSST - COMPARATIVE STUDY OF- SARADINDU PANDA - OPaid.pdf | Saradindu Panda et al., | 23-28 |
31 | 2015-12-31 | 5-4 | IJSSTDEC20152 | Avenues to Increase the Quality of Current Drive and Improve the Short-Channel Effects (SCES) of Triple Gate (TG) MOSFET | 2-8-1466488529-ABS - 2. Semi - IJSST - ANALYTICAL MODELING OF - S Nandi - OPaid.pdf | S Nandi & M Sarkar | 9-18 |
32 | 2015-12-31 | 5-4 | IJSSTDEC20153 | A Proposal on High Speed Pipelined Multiplier Architecture | 2-8-1466488596-ABS - 3.Semi - IJSST -Modelling of - PADMANABIN GOPALAKRISHNA - Paid.pdf | Padmanabin Gopalakrishna etal., | 19-28 |
33 | 2015-12-31 | 5-4 | IJSSTDEC20154 | A Study on Structural, Morphological, and Optical Properties of CDS Thin Films Deposited using Chemical Bath Deposition Method | 2-8-1466488680-ABS - 4. IJSST - CdS _finished_.pdf | R A. Shanmugavadivu et al., | 29-38 |
34 | 2017-12-31 | 7-1 | IJSSTDEC20171 | A Comparative Study of Sub-10nm Si, Ge and GaAs n-Channel FinFET | 2-8-1510398684-Abs.1.IJSSTDEC20171.pdf | Shafiqul Islam et al., | 1-6 |
35 | 2019-06-30 | 9-1 | IJSSTJUN20191 | Performance Comparison of Electrical Parameter between GaNFinFET and Si-FinFET Nano Devices | 2-8-1567764603-abs1IJSSTJUN20191.pdf | Anindya Shubro Chakroborty et al., | 1-12 |
36 | 2019-06-30 | 9-1 | IJSSTJUN20192 | Designing A New Reversible Adder/Subtractor Circuit for Low Power ALU Application | 2-8-1553332587-abs.2.IJSSTJUN20192.pdf | Disha A. Tiwade & R. Anitha | 13-22 |
37 | 2020-06-30 | 10–1 | IJSSTJUN20201 | Synthesis and Photoluminescence Properties of Sm3+ Doped Kmgpo4 Phosphor for White Light-Emitting Diodes | 2-8-1590833303-abs.IJSSTJUN20201.pdf | Sarvjeet Singh | 1-6 |
38 | 2021-12-31 | 11–2 | IJSSTDEC20211 | “Numerical Simulation of the Electrical Characteristics of Nanoscale Tg N-Finfet with the Variation of Gate Dielectric Materials” | 2-8-1623818035-abs1IJSSTDEC20211.pdf | Mostak Ahmed et al., | 1-10 |